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4th International Conference on Physics

Berlin, Germany

K E Prikhodko

K E Prikhodko

National Research Centre “Kurchatov Institute”, Russia

Title: Radiation technique to control the atomic composition and physical properties of thin film materials for different super conductive and other functional nano-elements production


Biography: K E Prikhodko


The paper describes a technique developed by the authors to create composite micro and nano structures for various purposes
from metals, semiconductors, insulators and super conductive materials with different chemical and physical properties.
The chemical composition and properties of materials can be controlled by means of ion beam irradiation. The technique is
implemented in three ways: by selective removal of atoms (SRA) to produce metals and semiconductors from insulators; the
selective displacement of atoms (SDA) to change the atomic composition from one atom to another (to change properties of
superconductive materials); and the selective association of atoms (SAA) to produce insulators. Present technique has been
successfully used to solve a number of urgent tasks in creating micro and nano devices. We have reached a three dimensional
structures resolution of about 15 nm for patterned magnetic media (153 Gb/in2). The metal wires with nanoscale section in
dielectric matrix were created. We have demonstrated the transformations of oxides to metals and semiconductors (Cu, W, Co,
Bi, Mo, Ta, Ge, etc.,) by SRA technique of nitrides to oxides (Si, Al, Ti, Ga, Nb) by SDA technique; and of pure elements (Si, Al,
Ti, Nb) to oxides by SAA technique. We have demonstrated formation of main cryoelectronics elements: resistors, capacitors
and planar Josephson junctions from initial superconductive NbN (5 nm) film by using ion beam irradiation and of on chip
integrated resistive elements for super conductive single photon detectors (SSPD) with photons number resolution.